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| SOT23 SILICON HIGH SPEED SWITCHING DIODE ISSUE 2 JANUARY 1995 PIN CONFIGURATION BAS19 BAS20 BAS21 2 1 PARTMARKING DETAILS BAS19 A8 BAS20 A81 BAS21 A82 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Repetative Peak Reverse Voltage Average Forward Rectified Current Forward Current Repetative Peak Forward Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VR VRRM IF(AV) IF IFRM Ptot Tj:Tstg BAS19 100 120 BAS20 150 200 200 200 625 330 -55 to +150 BAS21 200 250 UNIT V V mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Breakdown Voltage SYMBOL V(BR) BAS19 BAS20 BAS21 Reverse Current IR 120 200 250 100 100 1.00 1.25 5 5 50 MIN. TYP. MAX. UNIT CONDITIONS. V V V A IR=100A (1) IR=100A (1) IR=100A (2) VR=VRmax VR=VRmax, TJ=150C IF=100mA IF=200mA IF=10mA f=1MHz IF=30mA to IR=30mA RL=10 measured at IR=3mA nA Static Forward Voltage VF Differential Resistance Diode Capacitance rdiff Cd pF ns Reverse Recovery Time trr (1) (2) Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V Spice parameter data is available upon request for this device PAGE NO BAS19 BAS20 BAS21 SWITCHING TIME TEST DATA Recovery Time Equivalent Test Circuit Pulse Generator RS =50 DUT Sampling Oscilloscope RIN =50 V 90% 10% tp(tot) tp trr t IR* 90% +IF Input Signal Output Signal Input Signal Total Pulse Duration Duty Factor Rise Time of Reverse Pulse tp(tot) 2s Reverse Pulse Duration Oscilloscope Rise Time Circuit Capacitance* 0.0025 0.6ns tp tr C 100ns 0.35ns <1pF tr |
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